Document Type : Original Article
Authors
1 PhD student Of Department of Biosystem, Faculty of Agriculture, BuAli Sina University, Hamedan
2 Accociate Professor Of Department of Biosystem, Faculty of Agriculture, BuAli Sina University, Hamedan, Iran
Abstract
One of the technologies used to improve seed germination is use of cold plasma. Cold plasma is created at atmospheric pressure or vacuum by using electrical discharge in low pressure gas. In order to investigate the effect of two cold plasma production systems on improving the germination indices of chickpea seeds from Adel, Mansour and Azad cultivars in three plasma exposure times of 0, 30 and 60 seconds, they were studied in a completely randomized factorial design. The results showed that cold plasma treatment by corona method at 30 seconds exposure caused a significant increase in the root length index compared to the control treatment in Adel and Mansur varieties. Also, cold plasma treatment by corona method in 30 seconds of exposure caused improvement in seed vigor in Adel and Mansour varieties, respectively, by 35% and 41% compared to the control and root length in 30 seconds corona treatment in Adel Mansur and Azad varieties, respectively increased by 38%, 42% and 2% compared to the control. On the other hand, in the barrier method, only in the root length index, in Azad variety and in exposure to cold plasma for 60 seconds, 25% increase was observed compared to the control. Therefore a significant positive effect on increasing seed vigor and root length of chickpea varieties tested in cold plasma treatment by corona method compared to the control, while the barrier dielectric method has more uniformity in the treatments than corona method.
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